Organic nanofibers integrated by transfer technique in field-effect transistor devices
نویسندگان
چکیده
منابع مشابه
Organic nanofibers integrated by transfer technique in field-effect transistor devices
The electrical properties of self-assembled organic crystalline nanofibers are studied by integrating these on field-effect transistor platforms using both top and bottom contact configurations. In the staggered geometries, where the nanofibers are sandwiched between the gate and the source-drain electrodes, a better electrical conduction is observed when compared to the coplanar geometry where...
متن کاملField-effect transistor made of individual V2O5 nanofibers
A field-effect transistor ~FET! with a channel length of ;100 nm was constructed from a small number of individual V2O5 fibers of the cross section 1.5 nm310 nm. At low temperature, the conductance increases as the gate voltage is changed from negative to positive values, characteristic of a FET with n-type enhancement mode. The carrier mobility, estimated from the low-field regime, is found to...
متن کاملIsoindigo-Based Small Molecules with Varied Donor Components for Solution-Processable Organic Field Effect Transistor Devices.
Two solution-processable small organic molecules, (E)-6,6'-bis(4-(diphenylamino)phenyl)-1,1'-bis(2-ethylhexyl)-(3,3'-biindolinylidene)-2,2'-dione (coded as S10) and (E)-6,6'-di(9H-carbazol-9-yl)-1,1'-bis(2-ethylhexyl)-(3,3'-biindolinylidene)-2,2'-dione (coded as S11) were successfully designed, synthesized and fully characterized. S10 and S11 are based on a donor-acceptor-donor structural motif...
متن کاملIn-plane tunnelling field-effect transistor integrated on Silicon
Silicon has persevered as the primary substrate of microelectronics during last decades. During last years, it has been gradually embracing the integration of ferroelectricity and ferromagnetism. The successful incorporation of these two functionalities to silicon has delivered the desired non-volatility via charge-effects and giant magneto-resistance. On the other hand, there has been a numero...
متن کاملOrganic metal engineering for enhanced field-effect transistor performance.
A key device component in organic field-effect transistors (OFETs) is the organic semiconductor/metal interface since it has to ensure efficient charge injection. Traditionally, inorganic metals have been employed in these devices using conventional lithographic fabrication techniques. Metals with low or high work-functions have been selected depending on the type of semiconductor measured and,...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Nanoscale Research Letters
سال: 2011
ISSN: 1556-276X
DOI: 10.1186/1556-276x-6-319